Four of them are dual n-channel in 5 x 6mm or 3.3 x 3.3mm packages, and one has one n-channel and one p-channel mosfet in the same 5 x 6mm package.
“Recent years have seen a transition to higher voltages from conventional 12V and 24V, to 48V systems in communication base stations and industrial equipment, intending to achieve higher efficiency by reducing current,” according to the company. “In these situations, switching mosfets are required a withstand voltage of 100V to account for voltage fluctuations.”
Efforts have been made to keep on-resistance down (see table) while taking up much less room that dual single-mosfet TO-252 packages.
These dual mosfets “achieve the industry’s lowest Rds(on) by adopting new backside heat dissipation packages with excellent heat dissipation characteristics”, said the company, which has 40, 60, 80 and 150V dual mosfets in the pipeline.
Part | Polarity | Vdss V | Id (25°C) A | Power (25°C) W | Rds(on) in mΩ | Package | |||
---|---|---|---|---|---|---|---|---|---|
Vgs=10V | Vgs=4.5V | ||||||||
Typ | Max | Typ | Max. | ||||||
HP8KE6 | N+N | 100 | 17 | 21 | 41 | 54 | 53 | 73 | HSOP8 5x6x1mm |
HP8KE7 | 24 | 26 | 15.1 | 19.6 | 18.6 | 27.8 | |||
HT8KE5 | N+N | 100 | 7 | 13 | 148 | 193 | 200 | 300 | HSMT8 3.3×3.3×0.8 |
HT8KE6 | 13 | 14 | 44 | 57 | 56 | 83 | |||
HP8ME5 | N+P | 100 | 8.5 | 20 | 148 | 193 | 200 | 300 | HSOP8 5x6x1 |
-100 | -8.0 | 210 | 273 | 233 | 303 |