Top-down SEM pictures of 20nm pitch meanders after pattern transfer into TiN hard mask
Metal oxide negative tone resist was used, and yield was over 90%.
“This is the first ever electrical yield demonstration of 20nm pitch metal lines obtained with single high NA EUV patterning,” said Imec R&D v-p Steven Scheer. “These results represent an initial validation of the capabilities of high NA EUV lithography and its ecosystem, including resists, under-layers, photomasks, metrology, imaging and optical proximity correction, well as integrated patterning and etch.”
This performance metric was obtained on two different test structures: serpentine (aka meander, above right) and fork-fork (below left).
20nm pitch fork-forks after pattern transfer into TiN hard mask
“When combined with e-beam inspection, conductivity measurements of metallised serpentine and fork-fork structures give information on the stochastic defects – breaks and bridges, respectively,” said Imec director of patterning Philippe Leray.
The lab teamed up with Dutch semiconductor equipment maker ASML on the ecosystem, aimed at sub-2nm ICs, and brought in suppliers of materials, resists, masks and metrology, and chip manufacturers.
TEM of metallised 20nm pitch wires after chemical mechanical polishing
Results are being presented this week at SPIE Advanced Lithography + Patterning in San Francisco in two papers :
‘Probing defects in metal oxide resists with an electrical yield vehicle’
‘Advanced PnR logic patterning enabled by high-NA EUV lithography’.
