“Automotive safety-critical applications such as steering, braking and autonomous driving systems generally require more devices than other systems to meet redundancy requirements. Here, a power mosfet with high current density is required due to the size constraints,” according to the company, which explained: “The 200A rating is higher than that achieved by Toshiba’s 6.5 x 9.5mm DPAK+ package.”
The package is new to Toshiba, which has branded it S-TOGL for ‘small transistor outline gull-wing leads’.
Inside, it is post-less and has a multi-pin source lead structure to decrease resistance. Gull-wing leads are used to improve solder joint reliability in the automotive environment by reducing mounting stress.
The transistor is the XPJR6604PB, which combines the package with a die made on Toshiba’s U-MOS IX-H process to achieve its 530μΩ typical and 660μΩ maximum on-resistance (10Vgate, 100A drain).
This represents “an ~11% reduction when compared to Toshiba’s existing TO-220SM(W) packaged TKR74F04PB”, said the company, “Compared to this device, the mounting area has reduced by around 55% while retaining the channel-to-case thermal resistance characteristics.”
Both XPJR6604PB and the earlier TKR74F04PB have 0.4°C/W channel-to-case thermal resistance.
XPJR6604PB is also rated for use with 6V on its gate, where on-resistance is typically 0.75mΩ, and a maximum of 1.16mΩ.
XPJ1R004PB is a similar device, also in S-TOGL, rated at 40V, 160A, 480A pulsed, 1.0mΩmax (10Vgate, 80A drain) and 0.67°C/W.
Qualification is AEC-Q101 in for both new devices, and the channels can operate up to 175°C.
For use in parallel, reels of parts can be shipped in which the gate threshold range does not exceed 400mV.
Find the 200A XPJR6604PB data sheet here, and the 160A XPJ1R004PB product page here
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